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trnazist 2SA1390 PNP 300mW 0,5A 35V Hitaschi ,bipolární

Part No. 2SA1390 Maker HITACHI [Hitachi Semiconductor] Collector to base voltage VCBO –35 V Collector to emitter voltage VCEO –35 V Emitter to base voltage VEBO –4 V Collector current IC –500 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55...

tranzistor 2N3055 ekv MJ2955 NPN 15A 100V

Bipolární NPN tranzistor - Ic = 15 A, Pd = 115 W, pouzdro TO3 Parametry: Ic = 15 A Uce0 = 60 V, Ucb0 = 100 V, Pd = 115 W, h21E = 20..70, fT = 3 MHz, Pouzdro = TO3

SC237e-RFT 45V 0,1A NPN ekv,: BC237,KC237,KC147

SC237E-BC237 KC147 Kategorie Tranzistory > Bipolární > NPN RFT Puzdro TO-92S Parametry IC = 100 mA, PD = 200 mW, fT = 170 MHz Datasheet Link

IRBC30 tranzistor ekv 2SK2750 Mosfet N kanál 600V 3,5A

2SK2750 N-MOSFET 600V,3.5A,35W,1.7R TO220F IRFB30C

CA3083 Bipolar (BJT) Transistor 5x NPN 15V 100mA 450MHz 500mW 16-PDIP

2SK727

2SK3566 (STA4,Q,M) - Výkonový MOSFET, N Kanál, 2.5 A, 900 V, 6.4 ohm, 10 V, 4 V

ilustrační foto

2SK3111 mosfet N-kanál 200V 65W